LEC method and apparatus for growing a single crystal of compoun

Details LEC method and apparatus for growing a single crystal of compoun LEC method and apparatus for growing a single crystal of compoun

1989-09-12

1990-11-27

Straub, Gary P.

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

156605, 1566171, 1566202, 156DIG70, 156DIG115, 156DIG93, C30B 1504, C30B 2940, C30B 2948, C30B 3500

Patent

active

049734547

ABSTRACT:
If the distribution coefficient of an impurity in a compound melt is less than 1, the impurity concentration in the compound melt doped with the impurity increased during a crystal growth in an LEC method. A supplying device replenishes an undoped crystal into the melt in order to keep the impurity concentration constant. The undoped crystal is covered with a liquid encapsulant which is contained in an encapsulant-supporting-cylinder or double-cylinder. Replenishing rate (dQ/dt) of the undoped crystal and the growing rate (dS/dt) should satisfy the equation ##EQU1## The impurity concentration of a grown single crystal is uniform. Whole of the crystal is a single crystal. Electronic properties of the single crystal is uniform from seed end to tail end.

REFERENCES:
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patent: 2977258 (1961-03-01), Dunkle
patent: 3954416 (1976-05-01), Keller
patent: 4456499 (1984-06-01), Lin
patent: 4478675 (1984-10-01), Akai
patent: 4650540 (1987-03-01), Stoll
patent: 4659421 (1987-04-01), Jewett
Pamplin, Crystal Growth, 1975, pp. 552-555.
Hollan et al., "The Preparation of Gallium Arsenide", Current Topics in Materials Science, vol. 5, 1980, pp. 73-76.

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