Method of forming a surface emitting laser

Fishing – trapping – and vermin destroying

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148DIG95, 148DIG161, 357 55, 437133, 437947, 437981, 156654, 156662, H01L 2120, H01L 21203

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049904655

ABSTRACT:
A method and apparatus for forming a monolithic surface emitting laser diode array by providing vertical partly light transmissive mirror surfaces opposite parabolic light reflective mirror surfaces formed adjacent the active buried layer of a heterostructure diode laser. The mirror surfaces are preferably formed using a mass-transport heating process. Other mirror shapes may be formed in accordance with the invention.

REFERENCES:
patent: 4468850 (1984-09-01), Liau et al.
patent: 4869780 (1989-09-01), Yang et al.
patent: 4881237 (1989-11-01), Donnelly
patent: 4901329 (1990-02-01), Leas
Comerford et al., "Offset Laser to Groove Waveguide Coupler", IBM TDB, vol. 20, No. 4, Sep. 1977, pp. 1606-1608.
Windhorn et al., "Monolithic GaAs/AlGaAs Diode Laser/Deflector Devices. . . ", Appl. Phys. Lett., 48(24), 16 Jun. 1986, pp. 1675-1677.
Liau et al., "Surface-Emitting GaInAsP/InP Laser. . . ", Appl. Phys. Lett., 46(2), 15 Jan. 1985, pp. 115-117.
Walpole et al., "Monolithic Two-Dimensional Arrays of . . . Surface-Emitting Diode Lasers", Appl. Phys. Lett., 48(24), 16 Jun. 1986, pp. 1636-1638.
Mukai et al., "Transverse Beam Deflection in a Semiconductor Laser", Electron. Lett., vol. 22, No. 19, 11 Sep. 1986, pp. 974-975.
Yang et al., "Surface Emitting GaAlAs/GaAs Laser with Etched Mirrors", Electron. Lett., vol. 22, No. 8, 10 Apr. 1986, pp. 438-439.
"Lasing Characteristics of Improved GaInAsP/InP Surface Emitting Injection Lasers", K. Iga et al., Electronics Letters, 23rd Jun. 1983, vol. 19, No. 13, pp. 457-458.
"Room-Temperature Pulsed Oscillation of GaAlAs/GaAs Surface Emitting Injection Laser", K. Iga et al., Appl. Phys. Lett. 45(4), 15 Aug. 1984, pp. 348-350.
"Heterostructure Injection Lasers", Morton B. Panish, Proceedings of the IEEE, vol. 64, No. 10, Oct. 1976., pp. 1528-1529.
"New 1.5.mu.m Wavelength GaInAsP/InP Distributed Feedback Laser", Y. Itaya et al., Electronics Letters, 11th Nov. 1982, vol. 18, No. 23, pp. 1006-1008.
"A Novel Double-Heterostructure p-n-Junction Laser", A. J. Spring Thorpe, Appl. Phys. Lett., vol. 31, No. 8, Oct. 15, 1977, pp. 524-525.
"Novel Double-Heterostructure Lasers", A. J. Spring Thorpe et al., Technical Digest, International Electron Devices Meeting, IEEE, 1977, pp. 571-574.

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