Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1996-02-28
1997-10-28
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257798, 430 5, 430322, 430323, 430324, H01L 310232
Patent
active
056820569
ABSTRACT:
A phase shifting mask has a light shielding region and a light transmitting region including a light transmitting area and a first phase shifting area which is disposed between the light transmitting area and the light shielding region. The light transmitting region also includes a second phase shifting area disposed between the light shielding region and the first phase shifting area for producing a difference in phase between light that has passed through the second phase shifting area and light that has passed through the first phase shifting area. The phase shifting mask allows an optimum exposure light intensity to be set easily even if the phase shifting area width is large, and also makes it possible to form a desired pattern image on a wafer even if there is a positional misalignment between the light shielding region and the light transmitting area.
REFERENCES:
patent: 5208125 (1993-05-01), Lowrey et al.
patent: 5217830 (1993-06-01), Lowrey
patent: 5275896 (1994-01-01), Garofalo et al.
patent: 5292623 (1994-03-01), Kamp et al.
patent: 5308721 (1994-05-01), Garofalo et al.
Carroll J.
Sony Corporation
LandOfFree
Phase shifting mask and method of manufacturing same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Phase shifting mask and method of manufacturing same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase shifting mask and method of manufacturing same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1028102