Method of manufacturing capacitor

Details Method of manufacturing capacitor Method of manufacturing capacitor

1989-06-29

1991-02-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 60, 437228, 437235, 437919, H01L 2170

Patent

active

049904639

ABSTRACT:
In the invention, the thin natural oxide film formed on a surface of a first polycrystalline silicon layer containing an impurity diffused at a high concentration is transformed into a silicon nitride film by rapid nitriding. When the resultant structure is placed in a low-pressure CVD furnace to deposit a silicon nitride film, no natural oxide film is grown on the polycrystalline silicon layer. Hence, when the invention is applied to manufacture of a capacitor for a memory cell, the inter-layer insulative film of the capacitor is not too thick. As a result, a reliable capacitor suitable for micropatterning of elements can be formed between the first and second polycrystalline silicon layers.

REFERENCES:
patent: 4419819 (1983-12-01), Topich
Wicky C. C. Lu, "Advanced Cell Structures for Dynamic RAMS", IEEE Circuits and Devices Magazine, Jan. 1989, pp. 27-36.

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