Patent
1985-06-14
1987-03-10
Clawson, Jr., Joseph E.
357 20, 357 38, 357 86, H01L 2714
Patent
active
046494103
ABSTRACT:
A thyristor having a collecting electrode which is formed on a specific base layer adjacent to a specific emitter layer of the thyristor in order to absorb an excessive current generated in the specific base layer. A plurality of pilot thyristors are arranged inside the collecting electrode. Each gate electrode of the pilot thyristors is connected to an emitter electrode of the thyristor of the immediately preceding stage. An emitter electrode of the final stage of the thyristors is used commonly with the collecting electrode. A turn-on current from the collecting electrode serves as a gate current of the main thyristor.
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patent: 3968512 (1976-07-01), Voss
patent: 4142201 (1979-02-01), Sittig et al.
patent: 4208669 (1980-06-01), Silber et al.
patent: 4282542 (1981-08-01), Silber et al.
patent: 4298882 (1981-11-01), Homola et al.
Clawson Jr. Joseph E.
Tokyo Shibaura Denki Kabushiki Kaisha
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