Methods for high temperature water rinsing and drying of silicon

Details Methods for high temperature water rinsing and drying of silicon Methods for high temperature water rinsing and drying of silicon

1995-09-12

1997-10-28

Warden, Robert J.

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 3, 134 26, 134 28, C03C 2300

Patent

active

056813970

ABSTRACT:
Methods are disclosed for rinsing and drying of a silicon wafer. The methods involve cleaning the silicon wafer with hydrofluoric acid, immersing a silicon wafer in either boiling deionized water or a boiling hydrochloric acid solution, and then drawing the silicon wafer to dry from the boiling deionized water or the boiling aqueous hydrochloric acid solution. The aqueous hydrochloric acid solution preferably has a pH value of about 2.5. Oxidation of the surfaces of a silicon wafer is minimized by immersing the silicon wafer in either boiling water or a boiling aqueous hydrochloric acid solution thereby yielding a wafer having surfaces which are oxide free. A silicon wafer boiled in an aqueous hydrochloric acid solution experiences minimal surface roughening and has relatively smooth surfaces.

REFERENCES:
patent: 4716050 (1987-12-01), Green et al.
Nayami et al, Removal of Metallic contaminants and Native oxide Prom silicon wafer surface by pure water containing a little dissolved Oxygen Mat. Res. Soc. Symp. Proc. vol. 386, pp. 69-74, Apr. 1995.
Li et al. Surface Passivation and Microroughness of (100) Silicon Etched in Aqueous Hydrogen Halide (HF, HCI HB, HI) Solutions., J. Appl. Phys., 77(3), 1 Feb. 1995, 1323-1325.
Handbook of Semiconductor Wafer Cleaning Technology Edited by Werner Kern, Noyes Publications, 1993, pp. 134-135.

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