Method and apparatus capable of trimming a nonvolatile semicondu

Static information storage and retrieval – Floating gate – Particular biasing

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36518521, G11C 1606

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active

061187011

ABSTRACT:
In a semiconductor storage device including a differential circuit which compares a voltage outputted by a memory cell array 103 with a voltage outputted by a reference circuit 106, a constant current source circuit 109 is connected to the differential circuit 201 in parallel with the memory cell array 103 and outputs a signal for monitoring the threshold voltage of the reference circuit 106. A controller circuit 108 is changed over from an output signal of the memory cell array 103 to that of the current source circuit 109 on monitoring the reference circuit.

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patent: 5986937 (1999-11-01), Yero

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