Electrically programmable read-only memory and method for progra

Details Electrically programmable read-only memory and method for progra Electrically programmable read-only memory and method for progra

1999-01-25

2000-09-12

Zarabian, A.

Static information storage and retrieval

Floating gate

Particular biasing

36518505, G11C 1134

Patent

active

061187003

ABSTRACT:
In an electrically programmable read-only memory and method for the programming and reading of the memory, a self-convergent programming of a flash EEPROM is provided in which it is possible to rapidly and reliably set an inception voltage of a memory cell.

REFERENCES:
patent: 5671186 (1997-09-01), Igura
patent: 5818761 (1998-10-01), Onakado et al.
New Operation Mode for Stacked-Gate Flash Memory Cell--IEEE Electron Device Letters, vol. 16, No. 3, Mar. 1995.
Novel Self-limiting Program Scheme Utilizing N-channel Select Transistors in P-channel DINOR Flash Memory--Ohnakado et al--1996 IEEE.
An Experimental Confirmation of Automatic Threshold Voltage Convergence in a Flash Memory Using Alternating Word-Line Voltage Pulses--IEEE Electron Device Letters, vol. 18, No. 10 Oct. 1997--Gotou.

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