Method for the production of a semiconductor laser device

Details Method for the production of a semiconductor laser device Method for the production of a semiconductor laser device

1991-04-02

1993-01-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437130, 437133, 148DIG72, 148DIG95, H01L 2120

Patent

active

051806851

ABSTRACT:
There is provided a method for the production of a semiconductor laser device which emits laser light from an end facet thereof. This method comprises the steps of: forming a multi-layered structure including an active layer for laser oscillation on a semiconductor substrate; etching the semiconductor substrate and the multi-layered structure to form a pluralilty of striped grooves parallel to each other in such a manner that a plurality of projections are formed on the side face of the multi-layered structure in the striped grooves; separating the projections from the multi-layered structure to form a pair of cleavage planes each functioning as a resonator facet; forming a large-band-gap layer on at least one of the cleavage planes on the light-emitting side, the large-band-gap layer having a larger band gap than that of the active layer; forming a reflecting film on the large-band-gap layer; and finally cleaving the semiconductor substrate and the multi-layered structure to obtain a plurality of semiconductor laser devices.

REFERENCES:
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patent: 5022037 (1991-06-01), Kawanishi et al.
Patent Abstracts of Japan ( Aug. 26, 1986) 10(248):(E-431).
Nobuhara et al., Electronics Letters (Aug. 15, 1985) 21(17):718-719.
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Patent Abstract of Japan (Apr. 14, 1987) 11(119):(E-499).
Patent Abstracts of Japan ( Apr. 14, 1987) 11(119):(E-499).
Patent Abstracts of Japan (Apr. 18, 1985) 9(89):(E-309).

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