Thyristor with turn-off FET

Details Thyristor with turn-off FET Thyristor with turn-off FET

1984-06-04

1986-09-09

James, Andrew J.

357 43, 357 56, H01L 2972, H01L 2706, H01L 2908, H01L 2906

Patent

active

046112359

ABSTRACT:
A new semiconductor power device, suitable for electrical switching in automotive applications, is proposed. This device combines the low specific on-resistance achievable with bipolar regenerative switching devices with the convenience of insulated gate control of not only turn-on but also turn-off. A device structure is presented that also includes a pinch resistance effect to more rapidly produce turn-off.

REFERENCES:
patent: 3891866 (1975-06-01), Okuhara et al.
Perner et al., "MOS Gate Turn-Off Lateral SCR", IBM Tech. Discl. Bull., vol. 20, No. 6, Nov. 1977, pp. 2273-2274.
Russell et al., "The COMFET-A New High Conductance MOS-Gated Device", IEEE Electron Device Letters, vol. EDL-4, No. 3, Mar. 1983, pp. 63-65.

Affiliated with

Also associated with

Rating

Thyristor with turn-off FET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thyristor with turn-off FET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thyristor with turn-off FET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1017966