Junction-MOS power field effect transistor

Details Junction-MOS power field effect transistor Junction-MOS power field effect transistor

1983-11-16

1986-09-09

Larkins, William D.

357 4, 357 22, 357 234, 357 2312, 357 41, H01L 2980, H01L 2978, H01L 2712

Patent

active

046112200

ABSTRACT:
A thin film insulated gate field effect transistor having an opposite conductivity type island in its channel region. The island is electrically shorted to the transistor gate electrode.

REFERENCES:
patent: 3508123 (1970-04-01), Liles
patent: 3624895 (1971-12-01), MacIver et al.
patent: 3648340 (1972-03-01), MacIver
patent: 3877053 (1975-04-01), Kaplit
patent: 4141021 (1979-02-01), Decker
patent: 4463366 (1984-07-01), Ishii et al.
Hofstein, "An Analysis of Deep Depletion Thin-Film MOS Transistors," IEEE Trans. on Electron Devices, V. Ed-13, No. 12, pp. 846-855 (12/66).
"IC Techniques Boost Power-FET Current," Electronic Times, p. 1, (12/21/81).

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