Method of producing single-crystal semiconductor films by laser

Details Method of producing single-crystal semiconductor films by laser Method of producing single-crystal semiconductor films by laser

1980-06-06

1981-12-29

Roy, Upendra

Metal treatment

Compositions

Heat treating

148 33, 148187, 156616R, 357 30, 357 91, H01L 21263

Patent

active

043080782

ABSTRACT:
A method is disclosed for producing single-crystal semiconductor films. A thin layer of semiconductor single-crystal material is grown on a substrate having a lower melting point temperature than the layer material. The substrate and layer are heated in an oven to the melting point temperature of the substrate. Laser radiation of a wavelength absorbed by the layer is impinged on the layer, thereby generating heat in the layer and raising its temperature. Heat then flows to the substrate where it is absorbed, as is any transmitted radiation. Liquification of substrate material at the interface of the substrate with the layer results. Following such liquification, the layer is locally separated from the substrate. As the laser radiation is swept along the layer, the layer (film) is progressively removed from the substrate, until the film is entirely separated.

REFERENCES:
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 4187126 (1980-02-01), Radd et al.
patent: 4234358 (1980-11-01), Celler

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