Process for simultaneously fabricating isolation structures for

Details Process for simultaneously fabricating isolation structures for Process for simultaneously fabricating isolation structures for

1990-12-18

1991-11-12

Gonzalez, Frank

H01L 2712

Patent

active

050652176

ABSTRACT:
An isolation structure for bipolar and CMOS circuits formed during the same processing steps to optimize the integration of bipolar and CMOS circuits. A deep trench (46) is formed in a semiconductor circuit for providing deep isolation for bipolar circuits. A shallow recess (56) is then formed simultaneous with a stepped sidewall structure of the deep trench. The recess (56) and the trench (46) are covered by an insulating oxide (60). and thereafter filled with an undoped polysilicon (62) to form the different isolating structures for the different types of circuits.

REFERENCES:
patent: 4507158 (1985-03-01), Kamins et al.
patent: 4509249 (1985-04-01), Goto et al.
patent: 4547793 (1985-10-01), Bergeron
patent: 4666556 (1987-05-01), Fulton et al.
Healy; "Integrated Semiconductor Device"; IBM Technical Disclosure Bulletin, vol. 8, No. 7; 12/1965; pp. 1016-1017.
Abbas; "Recessed Oxide Isolation Process"; IBM Technical Disclosure Bulletin, vol. 20, No. 1; 06/1977; pp. 144-145.
Abbas; "Silicon on Polysilicon with Deep Dielectric Isolation"; IBM Technical Disclosure Bulletin,vol. 22, No. 7; 12/1979; pp. 2754-2755.
"Sputtered Silcion Process for Trench Isolation"; IBM Technical Disclosure Bulletin, vol. 27, No. 10A; 03/1985; pp. 5497-5498.
"Trench-Isolation Structure", IBM Technical Disclosure Bulletin, vol. 27, No. 12; 05/1985; pp. 6981-6982.
"Methods - - - Polysilicon Trench Fill in Semiconductor Devices"; IBM Technical Disclosure Bulletin, vol. 30, No. 10; 03.1988; pp. 156-158. 6

Affiliated with

Also associated with

Rating

Process for simultaneously fabricating isolation structures for does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for simultaneously fabricating isolation structures for , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for simultaneously fabricating isolation structures for will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1016048