Highly directive, broadband, bidirectional distributed amplifier

Details Highly directive, broadband, bidirectional distributed amplifier Highly directive, broadband, bidirectional distributed amplifier

1990-04-06

1991-09-03

Mullins, James B.

Amplifiers

With distributed parameter-type coupling means

Distributed amplifier

330277, H03F 360

Patent

active

050461559

ABSTRACT:
A highly directive, broadband, bidirectional distributed amplifier has a series of FETs connected between input and output lines which have their effective transconductances scaled in accordance with binomial coefficients along the distributed amplifier to maximize the directivity of the amplifier. Directivities on the order of -25 to -35 dB are obtained over as much as an octave in frequency. The effective binomial scaling may be achieved by insertion of appropriately sized capacitors in the gate lines of each of the FETs. The minimization bandwidth may be shifted to lower frequencies by incorporating passive impedances between the active devices in both the gate and drain lines. These impedances preferably comprise T-section inserts composed of serially connected lumped inductors and a capacitance from the junction between the inductors to ground. The distributed amplifier is bidirectional so that it can be excited from either port on the gate line with high directivity exhibited at each respective port on the drain line.

REFERENCES:
patent: 4291286 (1981-09-01), Wagner
patent: 4486719 (1984-12-01), Ayasli
patent: 4543535 (1985-09-01), Ayasli
patent: 4595881 (1986-06-01), Kennan
J. Beyer, et al., "MESFET Distributed Amplifier Design Guidelines," IEEE Trans. on Microwave Theory and Techniques, vol. MIT-32, No. 4, Mar. 1984, pp. 268-275.
O. P. Leisten, et al., "Distributed Amplifiers as Duplexer/Low Crosstalk Bidirectional Elements in S-Band," Electronics, vol. 24, No. 5, Mar. 3, 1988, pp. 264-265.

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