Semiconductor memory device

Static information storage and retrieval – Addressing

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365190, G11C 1140

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active

045731470

ABSTRACT:
A semiconductor memory device such as a static-type random-access memory device includes an address-change detection circuit which generates a pulse signal when an input address signal has changed and a latch circuit which temporarily stores the readout signal from the selected memory cell. The readout signal is input into the latch circuit in synchronization with the timing of the pulse signal or a short time after the pulse signal, and the readout data from the semiconductor memory device is obtained from the latch circuit, thereby increasing the time interval during which the readout data from the semiconductor memory device is available.

REFERENCES:
patent: 4247791 (1981-01-01), Rovell
IBM Technical Disclosure Bulletin, "Latch for Data Store", L. A. Caprio et al., vol. 19, No. 5, Oct. 1976, pp. 1810-1811.

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