Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-02-05
1987-03-10
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
148171, 148DIG106, 148DIG145, 427 431, 357 13, H01L 2126
Patent
active
046481745
ABSTRACT:
A multiple-zone junction termination extension region is formed adjacent a reverse-blocking junction in a semiconductor device to increase the breakdown voltage of such device. A single mask is used to form the multiple-zone JTE region, with the mask having different patterns of openings in the different zones of the mask. Adjacent openings are maintained with a center-to-center spacing of less than 25 percent of the depletion width of the reverse-blocking junction in a voltage-supporting semiconductor layer adjoining the reverse-blocking junction at the ideal breakdown voltage of the junction. As a consequence, the resulting non-uniformities in doping of the various zones of the JTE region are negligibly small. An alternative JTE region is finely-graduated in dopant level from one end of the region to the other, as opposed to having multiple zones of discrete doping levels.
REFERENCES:
patent: 3341380 (1967-09-01), Mets et al.
patent: 3436282 (1969-04-01), Shoda
patent: 4153904 (1979-05-01), Tasch, Jr. et al.
Tantraporn Wirojana
Temple Victor A. K.
Callahan John T.
General Electric Company
Hearn Brian E.
Rafter John R.
Snyder Marvin
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