Optical guided wave devices employing semiconductor-insulator st

Details Optical guided wave devices employing semiconductor-insulator st Optical guided wave devices employing semiconductor-insulator st

1980-01-25

1983-12-20

Bernstein, Hiram H.

Metal working

Method of mechanical manufacture

Assembling or joining

350 9612, 156600, 156662, G02B 5172

Patent

active

044208731

ABSTRACT:
A method for fabricating three-dimensional optical waveguides is disclosed. In this method, a single crystal semiconductor layer is grown upon an insulator which has an index of refraction lower than the semiconductor. The semiconductor layer is deposited to a thickness which provides confinement of light propagating in the semiconductor layer in the vertical direction. An effective larger index of refraction over a cross-sectional region of the semiconductor layer is then formed to provide confinement of light in the lateral direction. In the preferred method, the growth of single crystal semiconductor upon the insulator is achieved by a vapor-phase lateral epitaxial overgrowth technique.
Devices fabricated according to the method are also disclosed.

REFERENCES:
patent: 3984173 (1976-10-01), Shaw
patent: 4067641 (1978-01-01), Holton
patent: 4177094 (1979-12-01), Kroon
patent: 4220395 (1980-09-01), Wang et al.

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