Magneto-resistance effect element having a magnetic biasing film

Details Magneto-resistance effect element having a magnetic biasing film Magneto-resistance effect element having a magnetic biasing film

1998-04-29

2000-09-12

Heinz, A. J.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 539

Patent

active

061186244

ABSTRACT:
A spin valve GMR element comprises a spin valve GMR film stacked in turn a pinned layer, a non-magnetic layer, and a free layer of which magnetization direction varies according to an external magnetic field, and a magnetic biasing film providing a bias magnetic field to the free layer. A spin valve GMR film can be a dual element type. A magnetic biasing film has a stacked film of a high saturation magnetization magnetic layer and a hard magnetic layer. The high saturation magnetization magnetic layer has saturation magnetization Ms.sup.high which, when saturation magnetization of the free layer is Ms.sup.free and saturation magnetization of the hard magnetic layer is Ms.sup.hard, satisfies at least one of Ms.sup.high .gtoreq.Ms.sup.free or Ms.sup.high .gtoreq.Ms.sup.hard. In a spin valve GMR head of a reversed structure or a dual element type, even when a track width is narrowed, occurrence of Barkhausen noise can be effectively suppressed.

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