Titanium disulfide thin film and process for fabricating the sam

Details Titanium disulfide thin film and process for fabricating the sam Titanium disulfide thin film and process for fabricating the sam

1985-02-19

1986-02-25

Childs, S. L.

Stock material or miscellaneous articles

Composite

Of quartz or glass

4271261, 427255, 4272551, 428698, 428701, B32B 900, B32B 1706

Patent

active

045728739

ABSTRACT:
The present invention relates to a titanium disulfide film fabricated on a substrate, where crystallites of titanium disulfide is oriented at an angle of their c-axis to the substrate surface of not more than 45.degree., and to a process for fabricating the film, where the film is prepared by chemical vapor deposition from TiCl.sub.4 and H.sub.2 S as source gases under an inner pressure of reaction tube of 30 kPa or less.

REFERENCES:
patent: 4007055 (1977-02-01), Whittingham
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4203861 (1980-05-01), Thorp et al.
patent: 4259310 (1981-03-01), Clapper
patent: 4337239 (1982-06-01), Ruhs et al.
patent: 4364995 (1982-12-01), Crawford et al.
Pessa et al., "Characterization of Surface Exchange Readings Used to Grow Compound Films", Appl. Phys. Lett., vol. 38, pp. 131-132, Feb. 1981.

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