Lateral PNP transistor and method for forming same

Details Lateral PNP transistor and method for forming same Lateral PNP transistor and method for forming same

1990-10-30

1991-09-03

Wojcieckowicz, Edward J.

357 49, 357 89, 357 90, H01L 2972

Patent

active

050459112

ABSTRACT:
A process of forming a lateral PNP transistor includes the steps of: providing a chip of semiconductor material including an isolated N- device region; implanting N dopant material at a relatively low power and low dosage into a selected implant region of the device region; implanting N dopant material at a relatively higher power and higher dosage into the implant region; and forming emitter and collector regions in the device region such that an intrinsic base region is defined between the collector and emitter regions in the implant region.

REFERENCES:
patent: 4005451 (1977-01-01), Martinelli et al.
patent: 4045251 (1977-08-01), Graul et al.
patent: 4283236 (1981-08-01), Sirsi
patent: 4332627 (1982-06-01), Schmitt et al.
patent: 4390890 (1983-06-01), Bergeron et al.
patent: 4510676 (1985-04-01), Anantha et al.
patent: 4546536 (1985-10-01), Anantha et al.
IBM Technical Disclosure Bulletin, vol. 13, No. 6, Nov. 1970, by E. A. Valsamakis, "Lateral PNP with Gain Bandwidth Product", p. 1457.
IBM Technical Disclosure Bulletin, vol. 22, No. 7, Dec. 1979, by G. C. Feth et al., "Thin-Base Lateral PNP Transistor Structure", pp. 2939 through 2942.

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