Light emitting diodes with nitrogen doping

Details Light emitting diodes with nitrogen doping Light emitting diodes with nitrogen doping

1990-09-28

1991-08-20

Mintel, William

357 16, 357 63, 357 90, 357 45, H01L 3300

Patent

active

050418831

ABSTRACT:
A direct band gap semiconductor compound, GaAs.sub.1-x P.sub.x, where x is less than 0.45, is doped with nitrogen for forming an array of light emitting diodes. Preferably, the light emitting junctions of the LEDs are substantially free of nitrogen, but the underlying epitaxially grown semiconductor compound is nitrogen doped. The nitrogen doping is believed to immobilize dislocations for enhancing uniformity of light output power, reducing degradation and increasing uniformity of degradation during use of the LEDs. The proportion of LED arrays rejected for nonuniformity was reduced from 40 percent to less than 8 percent by nitrogen doping the direct band gap material.

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Blakeslee et al., "Reducing Resistance in PN Junctions Using GaAs.sub.i-x P.sub.x ", IBM Technical Disclosure Bulletin, vol. 15, No. 4, Sep. 1972, p. 1284.
Kirby, "Dislocation Pinning in GaAs by the Deliberate Introduction of Impurities", IEEE Journal of Quantum Electronics, vol. QE-11, No. 7, Jul. 1975, pp. 562-568.
Westphalen, R. et al., "Epilayers with Extremely Low Dislocation Densities Grown by Isoelectronic Doping of Hyride VPE Grown InP," Journal of Crystal Growth, vol. 96, 1989, pp. 982-984.
Bhattacharya, P. K. et al., "Defect Densities in Molecular Beam Epitaxial GaAs Achieved by Isoelectronic Doping," Applied Physics Letters, vol. 49, 8/25/86, pp. 470-472.
Ehrenreich et al., "Mechanism for Dislocation Density Reduction in GaAs Crystals by Indium Addition," Applied Physics Letters, vol. 46, Apr. 1, 1985, pp. 668-670.

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