Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-04-08
1987-03-03
Weisstuch, Aaron
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29578, 29589, 148 15, 148DIG90, 148DIG91, 148DIG141, 357 236, 357 239, 357 91, 427 531, H01L 21268
Patent
active
046464263
ABSTRACT:
In the production of an MOS transistor or a one-MOS transistor one-capacitor memory cell, a gate electrode is made of aluminum, doped regions are formed by an ion-implantation method using the gate electrode as a mask, and the doped regions are annealed by a laser beam.
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Iwamatsu et al., "Silicon on Sapphire MOSFETS Fabricated by Back Surface Laser Anneal Technology" Electronics Letters; vol. 15, No. 25, Dec. 6, 1979.
Iwamatsu et al., "Self Aligned Aluminum Gate MOSFET'S Fabricated by Laser Anneal" J. Electrochem Soc., vol. 28, No. 2, Feb. 1981.
Fowler et al.; "Process for Making MOSFET'S", IBM Tech Disc Bull, vol. 13, No. 11, Apr. 1971, p. 3358.
Esnault et al., "Self Aligned IGFET" IBM Tech Disc Bull, vol. 16, No. 5, Oct. 1973, pp. 1498-1499.
Lever, "Background Heating for Laser Annealing" IBM Tech Disc Bull, vol. 21, No. 10, Mar. 1979, p. 4040.
Fujitsu Limited
Weisstuch Aaron
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