Processing techniques for achieving production-worthy, low diele

Details Processing techniques for achieving production-worthy, low diele Processing techniques for achieving production-worthy, low diele

1995-06-05

1997-10-21

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437201, 437203, 437229, 437231, 148DIG100, 148DIG106, 1566611, H01L 2144

Patent

active

056796080

ABSTRACT:
The interconnects in a semiconductor device contacting metal lines includes a low resistance metal, such as copper, gold, silver, or platinum, and are separated by a material having a low dielectric constant, such as benzocyclobutene or a derivative thereof. A tri-layer resist structure is used, together with a lift-off process, to form the interconnects. The low dielectric constant material provides a diffusion barrier to the diffusion of the low resistance metal. The tri-layer resist includes a first layer of a dissolvable polymer, a second layer of a hard mask material, and a third layer of a resist material. The resulting structure provides an integrated circuit with increased speed and ease of fabrication.

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