Spin-on-glass integration planarization having siloxane partial

Details Spin-on-glass integration planarization having siloxane partial Spin-on-glass integration planarization having siloxane partial

1992-09-03

1993-10-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437195, 437228, 437235, 156646, 156653, H01L 21465

Patent

active

052504727

ABSTRACT:
A new method of planarizing an integrated circuit is achieved. The dielectric layers between the conductive layers of an integrated circuit are formed and planarized via an integration of siloxane partial etchback and silicate processes. A first intermetal dielectric layer, thinner than that in conventional partial etchback methods, is deposited. This is covered with a siloxane spin-on-glass layer with no voids. This layer is baked, but not cured. The siloxane is partially etched back to the underlying metal layer resulting in a loss of planarity. An undoped silicate spin-in-glass coating is applied and baked followed by the curing of both the siloxane and silicate spin-on-glass layers. This results in excellent planarity with no cracking of the cured spin-on-glass. Most importantly, this method can be used for submicron technologies having conductor lines which are spaced from one another by submicron feature size.

REFERENCES:
patent: 4676867 (1987-06-01), Elkins et al.
patent: 4775550 (1988-10-01), Chu et al.
patent: 4826786 (1989-05-01), Merenda
patent: 4885262 (1989-12-01), Ting et al.
patent: 5003062 (1991-03-01), Yen
patent: 5106787 (1992-04-01), Yen
patent: 5119164 (1992-06-01), Sliwa,Jr. et al.
G. Hausamann et al., Proceedings 5th Intl IEEE VMIC Conf. 1988, pp. 293-298, The dependence of oxide and Spin-on-glass etchrates.

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