Semiconductor photo device

Details Semiconductor photo device Semiconductor photo device

1986-09-05

1988-03-01

Carroll, J.

357 13, 357 16, 357 61, H01L 2990, H01L 29161, H01L 2714

Patent

active

047290048

ABSTRACT:
A semiconductor photo detector provided with a photo detecting portion, in which at least three semiconductor layers of the same conductivity type and different energy gaps are formed in the order of magnitude of the energy gap, and in which another semiconductor layer which has the same composition as a first semiconductor layer having the largest energy gap among the at least three semiconductor layers but is different in conductivity type from the first semiconductor layer is formed in contact with the first semiconductor layer at the optical input side of the semiconductor photo diode.

REFERENCES:
patent: 4122407 (1978-10-01), Van Vech Tau
patent: 4144540 (1979-03-01), Bottka
patent: 4179702 (1979-12-01), Lamonte
patent: 4473835 (1984-09-01), Forrest et al.
K. Taguchi et al., "InP-InGaAsP Planar Avalanche Photodiodes with Self-Guard-Ring Effect", Electronics Letters, vol. 15 (1979) pp. 453-455.
H. D. Law et al., "Ion-Implanted InGaAsP Avalanche Photodiode", Applied Physics Letters, vol. 33 (1978) pp. 920-922.
M. C. Boissy et al., "An Efficient GaInAs Photodiode for Near-Infrared Detection", Conference: Proceedings of the 6th International Symposium on Gallium Arsenide and Related Compounds, Edinburgh, Scotland (20-22 Sep. 1976) pp. 427-436.

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