Patent
1986-08-01
1988-03-01
James, Andrew J.
357 42, 357 16, H01L 2980
Patent
active
047290005
ABSTRACT:
A low power complementary (Al,Ga)As/GaAs heterostructure insulated gate field-effect transistor (HIGFET) approach is described in which the n-channel transistor utilizes an In.sub.x Ga.sub.1-x As semiconductor gate to reduce threshold voltage (V.sub.t) of the n-channel FET to allow low power circuit operation.
REFERENCES:
patent: 4603469 (1986-08-01), Armiento
IBM Technical Disclosure Bulletin, vol. 27, No. 9, pp. 5064-5066, by Tang Feb. 1985.
IBM Technical Disclosure Bulletin, vol. 29, No. 1, p. 471, Jun. 1986, "Heterojunction FET".
Solid State Electronics, vol. 28, No. 7, pp. 659-668, 1985 by Lee.
Katayama et al., "A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure", Jpn. J. Appl. Phys., vol. 23, L150-2, Mar.'84.
Solomon et al., "A GaAs Gate Heterojunction FET", IEEE Electron Device Letters, vol. 5, No. 9, Sep.'84, pp. 379-380.
Kiehl et al., "Complementary p-MODFET and n-HB MESFET (Al,Ga)As Transistors", IEEE Electron Device Letters, vol. EDL-5, No. 12 Dec. '84, pp. 521-523.
Kiehl et al, "Complementary p-MODFET and n-HB MESFET (Al,Ga)As FETs IEDM'84, pp. 854-855.
Zuleeg et al, "Double-Implanted GaAs Complementary JFETs", IEEE Electron Device Letters, vol., EDL-5, No. 1, Jan.'84, pp. 21-23.
Dahle Omund R.
Honeywell Inc.
James Andrew J.
Prenty Mark
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