Zone purification of silicon in a reactive plasma

Details Zone purification of silicon in a reactive plasma Zone purification of silicon in a reactive plasma

1981-07-28

1983-08-16

Vertiz, O. R.

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

204164, 156DIG64, C01B 3302

Patent

active

043991165

ABSTRACT:
Boron is removed from silicon by zone melting purification. A jet of hot plasma obtained by high frequency excitation is directed on a zone of a bar of silicon to be purified. The plasma is formed from a mixture of a plasma-producing gas, such as argon, and an amount of oxygen which is sufficiently low to avoid oxidization of silicon.

REFERENCES:
patent: 2901325 (1959-08-01), Theuerer

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