Zone melting apparatus for monocrystallizing semiconductor layer

Details Zone melting apparatus for monocrystallizing semiconductor layer Zone melting apparatus for monocrystallizing semiconductor layer

1985-12-31

1987-09-15

Goldberg, E. A.

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

219405, 219411, 118725, H05B 364, F27D 1100, F27B 514

Patent

active

046941436

ABSTRACT:
A zone melting apparatus, in accordance with the present invention for monocrystallizing a semiconductor layer in a layered substance, includes: an upper elongated heater for zone melting of the semiconductor layer, the upper heater being disposed above and parallel to the semiconductor layer; a plurality of lower elongated heaters for heating the whole layered substance, the lower heaters being disposed in a plane below and parallel to the layered substance and the axis of each of the lower heaters being substantially perpendicular to the axis of the upper heater; a plurality of power suppliers for supplying electric power to the lower heaters; one or more temperature sensors for estimating the temperature of the layered substance; and a controller for controlling the power suppliers in response to the output of the temperature sensor(s), the controller making control so that the temperature of the central portion of the layered substance is slightly lower than that of the outer portions thereof.

REFERENCES:
patent: 2629162 (1953-02-01), Peck
patent: 3836751 (1974-09-01), Anderson
patent: 4160893 (1979-07-01), Meyen
patent: 4331485 (1982-05-01), Gat
patent: 4395433 (1983-07-01), Nagakubo
"Zone-Melting Recrystallization of Encapsulated Silicon Films on SiO.sub.2 -Morphology and Crystallography", Appl. Phys. Lett., 40(1982)158, by M. W. Geis et al.

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