Zone melt recrystallization apparatus

Details Zone melt recrystallization apparatus Zone melt recrystallization apparatus

1987-11-13

1991-07-23

Chaudhuri, Olik

Chemical apparatus and process disinfecting, deodorizing, preser

Physical type apparatus

Crystallizer

422250, 422251, 432231, 219405, 219411, 373139, C30B 1332

Patent

active

050341995

ABSTRACT:
The improved zone-melt recrystallization apparatus is comprised of a port system for providing a thermal barrier between the recrystallization chamber and the loader assembly. A bellows system is used to lift a plurality of pins that support a silicon wafer being recrystallized. Flexure supports are designed to constrain the motion of the pins within the desired direction of motion of the wafer.

REFERENCES:
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patent: 4221956 (1980-09-01), Fielding et al.
patent: 4224504 (1980-09-01), Erikson et al.
patent: 4371421 (1983-02-01), Fan et al.
patent: 4436985 (1984-03-01), Weber
patent: 4479846 (1984-10-01), Smith et al.
patent: 4535228 (1985-08-01), Mimura et al.
patent: 4694143 (1987-09-01), Nishimura et al.
J. Electrochem. Soc.; "Zone-Melting Recrystallization of Si Films With a Moveable-Strip-Heater Oven"; by Geis et al.; Dec. 1982; pp. 2812-2818.
Appl. Phys. Letters; "Zone-Melting Recrystallization of 3-in.-diam Si Films on SiO.sub.2 -coated Si Substrates"; by Fan et al.,; vol. 41, No. 2; Jul. 1982; pp. 186-188.
Journal of Appl. Phys.; "Effects of Heating-Temperature Gradient and Scanning Direction on Crystallographic Properties of Zone-Melting Recrystallized Silicon on Square-Shaped Fused Quartz"; by Fujita et al.; vol. 56, No. 10; Nov. 1984; pp. 2986-2988.

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