ZnS:Mn Thin-film electroluminescent element with memory function

Details ZnS:Mn Thin-film electroluminescent element with memory function ZnS:Mn Thin-film electroluminescent element with memory function

1977-05-18

1983-07-19

Demeo, Palmer C.

Electric lamp and discharge devices

With luminescent solid or liquid material

Solid-state type

H05B 3314, H05B 3318, H05B 3322

Patent

active

043946011

ABSTRACT:
A ZnS thin-film electroluminescent element which exhibits the hysteresis phenomenon within the light emission versus applied voltage characteristics, the electric current versus applied alternating voltage characteristics, or the electric current phase versus applied alternating voltage characteristics. The ZnS element comprises a ZnS EL thin-film including Mn serving as a luminescent center with a concentration of 0.05-5.0 wt. %, and a pair of dielectric layers made of rare earth oxides or oxides groups of III, IV and V of the Periodic Table. The EL thin-film is sandwiched between the pair of the dielectric layers. The ZnS EL thin-film is made by applying the electron-beam heating evaporation technology to a ZnS pellet.

REFERENCES:
patent: 2933602 (1960-04-01), Gillson, Jr.
patent: 3806759 (1974-04-01), Kabaservice et al.
patent: 3854070 (1974-12-01), Vlasenko et al.

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