Zno varistor of low-temperature sintering ability

Details Zno varistor of low-temperature sintering ability Zno varistor of low-temperature sintering ability

1998-06-23

1999-10-26

Gellner, Michael L.

Electrical resistors

Resistance value responsive to a condition

Current and/or voltage

338 20, 338 13, H01C 710

Patent

active

059735899

ABSTRACT:
Zinc oxide (ZnO) varistors containing vanadium oxide as the principal additive and one or more cobalt oxides and/or manganese oxides additives exhibit excellent nonlinear current-voltage characteristics. Preferably the varistor compositions are capable of being sintered at a temperature of from 900.degree. C. to 950.degree. C. The low-firing capability of the newly developed materials is attractive for the application in the multilayer chip varistor, because it can cofire with the silver (Ag) or palladium/silver (Pd/Ag) internal electrode instead of using the expensive palladium (Pd) or platinum (Pt) metal. With an appropriate combination of ZnO, vanadium oxide (V.sub.2 O.sub.5) and other oxide additives, a varistor sintered at 900.degree. C. for 2 hours is obtained with a nonlinear coefficient>50 and a leakage current<20 .mu.A/cm.sup.2.

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(Jyh-Kuang Tsai et al., "Non-ohmic Characteristic of ZnO-V2O5 Ceramics", J. Appl. Phys. 76 (8), p. 4822, Oct. 1994.
Jyh-Kuang Tsai et al., "Non-ohmic Characteristic of ZnO-V.sub.2 O.sub.5 Ceramics", J. Appl. Phys. 76 (8), pp. 4817-4822, no date.
Jyh-Kuang Tsai et al., "Microstructure and Nonohmic Properties of ZnO-V.sub.2 O.sub.5 Ceramics", J. Appl. Phys., vol. 34, pp. 6452-6456, no date.
Jyh-Kuang Tsai et al., "Microstructure and Nonohmic Properties of Binary ZnO-V.sub.2 O.sub.5 Ceramics Sintered at 900 .degree. C.C", Material Letters 26, pp. 199-203, no date.

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