ZnO system semiconductor device

Details ZnO system semiconductor device ZnO system semiconductor device

2006-02-21

2006-02-21

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Reexamination Certificate

active

07002179

ABSTRACT:
In order to provide ZnO system semiconductor devices having a stable p-type ZnO layer, a ZnO thin film is doped with nitrogen atoms having a high concentration. By fabricating the stable p-type ZnO layer, combinations with n-type ZnO layers easy of fabrication, or combinations with different compositions of p-type layers or n-type layers are made possible, thereby it enables to provide various configurations of ZnO system semiconductor devices.A ZnO system semiconductor device according to the present invention is characterized in that in a semiconductor device comprising one or more layers of n-type layer and p-type layers respectively, at least one layer of said p-type layers is (are) formed of the Zn-polar ZnO system semiconductor film doped with nitrogen atoms such that the thin film growth direction of said Zn-polar ZnO system semiconductor film is conformed to the direction of Zn polarity (0001).

REFERENCES:
patent: 2004/0108505 (2004-06-01), Tuller et al.
patent: 2004/0207903 (2004-10-01), Apostolopoulos et al.
patent: 2002-118330 (2002-04-01), None
Soon-Ku Hong et al., “Control of polarity of ZnO films grown by plasma-assisted molecular-beam epitaxy: Zn- and O-polar ZnO films on Ga-polar GaN templates”, Applied Physics Letters, vol. 77, No. 22, Nov. 27, 2000, pp. 3571-3573.
D.C. Look et al., “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy”, Applied Physics Letters, vol. 81, No. 10, Sep. 2, 2002, pp. 1830-1832.

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