ZnO layer and semiconductor light emitting device

Details ZnO layer and semiconductor light emitting device ZnO layer and semiconductor light emitting device

2009-04-23

2010-06-01

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant material

C257S101000, C257S103000, C257SE21001, C257SE21002, C257SE33003, C257SE33022, C438S478000, C438S510000, C438S914000, C438S918000

Reexamination Certificate

active

07728347

ABSTRACT:
A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer.

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International Search Report dated Nov. 20, 2007 (10 pages), with partial English translation of the Written Opinion of the International Searching Authority (3 pages), issued in counterpart International Application Serial No. PCT/JP2007/001146.

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