ZnO film with C-axis orientation

Details ZnO film with C-axis orientation ZnO film with C-axis orientation

2005-11-17

2009-10-06

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S086000, C117S090000, C117S094000, C117S095000

Reexamination Certificate

active

07597757

ABSTRACT:
A ZnO film with a C-axis preference is provided with a corresponding fabrication method. The method includes: forming a substrate; forming an amorphous Al2O3film overlying the substrate; and, forming a ZnO film overlying the Al2O3film at a substrate temperature of about 170° C., having a C-axis preference responsive to the adjacent Al2O3film. The substrate can be a material such as Silicon (Si) (100), Si (111), Si (110), quartz, glass, plastic, or zirconia. The Al2O3film can be deposited using a chemical vapor deposition (CVD), atomic layer deposition (ALD), or sputtering process. Typically, the Al2O3layer has a thickness in the range of about 3 to 15 nanometers (nm). The step of forming the ZnO film having a C-axis preference typically means that the ZnO film has a (002) peak at least 5 times greater than the (100) peak, as measured by X-ray diffraction (XRD).

REFERENCES:
patent: 4501987 (1985-02-01), Mitsuyu et al.
Hu et al., “Preparation of piezoelectric coefficient modulated multilayer film ZnO/AI2O3 and its ultrahigh frequency resonance”, Applied Physics Letters 71(4) Jul. 28, 1997 p. 548-50.

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