ZnO/Cu(InGa)Se 2 solar cells prepared by vapor phase Zn doping

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S093000, C438S094000, C136S262000, C136S264000, C136S265000

Reexamination Certificate

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10534217

ABSTRACT:
A process for making a thin film ZnO/Cu(InGa)Se2solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2layer on the metal back contact on the glass substrate to a temperature range between about 100° C. to about 250° C.; subjecting the heated layer of Cu(InGa)Se2to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.

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