ZnO-containing semiconductor layer, its manufacture method,...

Details ZnO-containing semiconductor layer, its manufacture method,... ZnO-containing semiconductor layer, its manufacture method,...

2009-08-13

2011-10-18

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant material

C257S013000, C257S076000, C257SE21527, C438S104000

Reexamination Certificate

active

08039867

ABSTRACT:
A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.

REFERENCES:
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K. Iwata et al., “Bandgap Engineering of ZnO Using Se,” phys. Stat. Sol. (B) 229, No. 2, 887-890 (2002).
English Language International Search Report dated Apr. 1, 2008 issued in parent Appln. No. PCT/JP2008/000348.
Japanese language PCT/ISA/220, International Preliminary Examination Report and Written Opinion dated Apr. 1, 2008 (and Partial English language translation thereof) issued in Application No. PCT/JP2008/000348.

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