Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material
Reexamination Certificate
2011-06-28
2011-06-28
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant material
C257S089000, C257S200000, C257SE33003, C257SE33041
Reexamination Certificate
active
07968905
ABSTRACT:
A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.
REFERENCES:
patent: 6340824 (2002-01-01), Komoto et al.
patent: 6939731 (2005-09-01), Ishizaki
patent: 2001/0038426 (2001-11-01), Bechtel et al.
patent: 2002/0014631 (2002-02-01), Iwata et al.
patent: 2003/0015955 (2003-01-01), Shiiki et al.
patent: 2003/0042851 (2003-03-01), Iwata et al.
patent: 2003/0153903 (2003-08-01), Kumagi et al.
patent: 2004/0056258 (2004-03-01), Tadatomo et al.
patent: 11-087778 (1999-03-01), None
patent: 2002-176198 (2002-06-01), None
patent: 2003-305058 (2003-10-01), None
patent: 2004-123764 (2004-04-01), None
Merita, S. et al, “Oxygen in sputter-deposited ZnTe thin films,” phys. stat. col. (c)3, No. 4, pp. 960-963(2006).
Horio Naochika
Kato Hiroyuki
Kotani Hiroshi
Ogawa Akio
Sano Michihiro
Holtz Holtz Goodman & Chick PC
Jefferson Quovaunda
Smith Matthew
Stanley Electric Co. Ltd.
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