ZnO-containing semiconductor layer and ZnO-containing...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material

Reexamination Certificate

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C257S089000, C257S200000, C257SE33003, C257SE33041

Reexamination Certificate

active

07968905

ABSTRACT:
A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

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patent: 2004-123764 (2004-04-01), None
Merita, S. et al, “Oxygen in sputter-deposited ZnTe thin films,” phys. stat. col. (c)3, No. 4, pp. 960-963(2006).

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