ZnO based semiconductor light emitting device and its...

Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide

Reexamination Certificate

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C257S094000, C257S012000, C257S014000, C257SE21002, C438S047000

Reexamination Certificate

active

07943927

ABSTRACT:
A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO1-x1Sx1; a second semiconductor layer formed above the first semiconductor layer and containing ZnO1-x2Sx2; and a third semiconductor layer formed above the second semiconductor layer and containing ZnO1-x3Sx3, wherein an S composition x1 of the first semiconductor layer, an S composition x2 of the second semiconductor layer and an S composition x3 of the third semiconductor layer are so selected that an energy of the second semiconductor layer at the lower end of a conduction band becomes lower than both energies of the first and third semiconductor layers at the lower end of the conduction bands, and that an energy of the second semiconductor layer at the upper end of a valence band becomes higher than both energies of the first and third semiconductor layers at the upper end of the valence bands.

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K. Iwata et al., “Bandgap Engineering of ZnO using Se,” Phys. Stat. Sol. (B) 229, No. 2, pp. 887-890, 2002.
B. K. Meyer., et al., “Structural properties and bandgap bowing of ZnO1-xSx thin films deposited by reactive sputtering,” Applied Physics Letters, vol. 85, No. 21, pp. 4921-4931, Nov. 22, 2004.
English Language International Search Report dated Apr. 22, 2008 issued in parent Appln. No. PCT/JP2008/000019.
Written Opinion of the International Searching Authority issued in parent Appln. No. PCT/JP2008/000019 and partial English Translation thereof.

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