ZnO based semiconductor device manufacture method

Details ZnO based semiconductor device manufacture method ZnO based semiconductor device manufacture method

2008-11-05

2010-06-29

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S689000, C257S079000, C257S103000, C257SE33019, C257SE33074, C257SE21476

Reexamination Certificate

active

07745345

ABSTRACT:
A manufacture method for a ZnO based semiconductor device includes the steps of: (a) preparing a ZnO based semiconductor wafer including a ZnO based semiconductor substrate having a wurzeit structure with a +C plane on one surface and a −C plane on an opposite surface, a first ZnO based semiconductor layer having a first conductivity type epitaxially grown above the +C plane of the ZnO based semiconductor substrate, and a second ZnO based semiconductor layer having a second conductivity type opposite to the first conductivity type epitaxially grown above the first semiconductor layer; and (b) wet-etching the ZnO based semiconductor wafer with acid etching liquid to etch the −C plane of the ZnO based semiconductor substrate

REFERENCES:
patent: 2003/0173568 (2003-09-01), Asakawa et al.
patent: 2003/0218179 (2003-11-01), Koide et al.
patent: 2006/0054888 (2006-03-01), Ito et al.
patent: 2009/0045393 (2009-02-01), Nakahara
patent: 2003-258296 (2003-09-01), None
patent: 2003-318443 (2003-11-01), None

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