Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2005-06-27
2009-10-20
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S479000, C438S481000, C257SE21090, C257SE21461
Reexamination Certificate
active
07605012
ABSTRACT:
A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.
REFERENCES:
patent: 3664867 (1972-05-01), Galli et al.
patent: 3944732 (1976-03-01), Kino
patent: 4737684 (1988-04-01), Seto et al.
patent: 5009720 (1991-04-01), Hokuyo et al.
patent: 5151006 (1992-09-01), Marttila et al.
patent: 5521454 (1996-05-01), Hattori et al.
patent: 5532537 (1996-07-01), Koike et al.
patent: 5569548 (1996-10-01), Koike et al.
patent: 5605867 (1997-02-01), Sato et al.
patent: 5741580 (1998-04-01), Hayamizu et al.
patent: 5815520 (1998-09-01), Furushima
patent: 5889295 (1999-03-01), Rennie et al.
patent: 6045626 (2000-04-01), Yano et al.
patent: 6057561 (2000-05-01), Kawasaki et al.
patent: 6071633 (2000-06-01), Potter
patent: 6078717 (2000-06-01), Nashimoto et al.
patent: 6086673 (2000-07-01), Molnar
patent: 6127768 (2000-10-01), Stoner et al.
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6410162 (2002-06-01), White et al.
patent: 6456640 (2002-09-01), Okumura
patent: 2002/0126719 (2002-09-01), Kadota
patent: 0 863 555 (1998-09-01), None
patent: 55-110089 (1980-08-01), None
patent: 7-283436 (1995-10-01), None
patent: 09-326534 (1997-12-01), None
patent: 10-256673 (1998-09-01), None
patent: 10-270749 (1998-10-01), None
patent: 2000-82842 (2000-03-01), None
patent: 2000-101138 (2000-04-01), None
patent: 2000-244015 (2000-09-01), None
Appl. Phys. Lett., vol. 72, No. 25, p. 3270-3272 (Jun. 22, 1998).
Appl. Phys. Lett., vol. 74, No. 17, p. 2534-2536 (Apr. 26, 1999).
Fons Paul
Iwata Kakuya
Nakahara Ken
Niki Shigeru
Takasu Hidemi
Arent & Fox LLP
Estrada Michelle
National Institute of Advanced Industrial Science & Tech.
Rohm & Co., Ltd.
LandOfFree
ZnO based compound semiconductor light emitting device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with ZnO based compound semiconductor light emitting device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and ZnO based compound semiconductor light emitting device and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4074527