Zinc sulfide or selenosulfide material

Compositions: coating or plastic – Materials or ingredients – Pigment – filler – or aggregate compositions – e.g. – stone,...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

106400, 106401, C09C 104, C04B 1436

Patent

active

051522292

ABSTRACT:
A pigment comprises a material comprising crystalline zinc selenide or selenosulphide below 40% of whose zinc atoms and optionally some of whose selenium and sulphur atoms are substituted to lower the band gap energy but retain the essential crystal lattice of the zinc selenide or silenosulphide, the resulting lattice containing a greater percentage of zinc atoms than of sulphur atoms. The material wherein at least 0.1% of the zinc atoms are substituted is a new composition of matter.

REFERENCES:
patent: 3372997 (1968-03-01), Bither, Jr.
patent: 4086123 (1978-04-01), Hummel et al.
patent: 4094704 (1978-06-01), Milnes
patent: 4216023 (1980-08-01), Kinstle
patent: 4707297 (1987-11-01), Paske, Jr. et al.
patent: 4755856 (1988-07-01), Nishizawa
patent: 4904618 (1990-02-01), Neumark
patent: 4939043 (1990-06-01), Biricik et al.
Nassau's "The Physics and Chemistry of Color: The Fifteen Causes of Color", Chapter 8, Wiley, New York, 1983.
"Dependence of energy gap on x and T in Zn.sub.1-x Mn.sub.x Se: The role of exchange interaction", Bylsma, et al., Physical Review B, vol. 33, No. 12, 15 Jun. 1986, The American Physical Society, pp. 8207-8215.
"Preparation and Crystal Growth of Materials in the Pseudo-Binary CuInSe.sub.2 -SnSe and CuGaSe.sub.2 -SnSe Systems", Lambrecht, Jr., Mat. Res. Bull. vol. 8, pp. 1383-1387, 1973, Pergamon Press, Inc.
"Optical properties of the (CuInSe.sub.2).sub.1-x -(2ZnSe).sub.x systems", Gan, et al., Physical Review B, vol. 12, No. 12, 13 Dec. 1975, pp. 5797-5802.
"Luminescence Centers in Doped ZnSe and the Activation Energy of their Formation", Kukk, et al., translated from Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy, vol. 16, No. 11, pp. 1916-1920, Nov. 1990, Plenum Pub. Corp.
"Cell Dimensions and Electric Properties of the Solid Solutions . . . ", Donohue, et al., Electrochemical Science and Technology, vol. 121, No. 3, pp. 327-328.
Chemical Abstracts, vol. 110, No. 2, Jan. 1989, Columbus, Ohio, USA A. Kamata: "Zinc selenide sulfide crystal growth by metal-organic chemical vapor deposition" p. 565.
Soviet Physics-Crystallography, vol. 14, No. 4, Jan.-Feb. 1970, pp. 531 and 532, "Crystal Structure of Solid Solutions in the ZnSe-CdSe System".
Russian Journal of Inorganic Chemistry, 1960 5 (8), pp. 871 and 872, "Effect of Structure and Composition on the Width of the Forbidden Gap in the ZnSe-CdSe System".
Phys Chem Solids, 1962 23 pp. 1479 and 1480, "Solubility of ZnSe and ZnTe in CdS".
Chemical Abstracts, vol. 5, 11907d, abstract of Fiz Tverd Tela 4, 1535-41 (1962), "Activation energy dependence on molar composition in some A.sup.II B.sup.VI -A.sup.II B.sup.VI systems in thin layers".
Chemical Abstracts, 4731d, abstract of Izv Akad Nauk USSR, Ser Fiz 28(6), 1065-8 (1964), "Structure and Electrical Properties of the ZnSe-HgSe System".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Zinc sulfide or selenosulfide material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Zinc sulfide or selenosulfide material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Zinc sulfide or selenosulfide material will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1182693

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.