Zinc oxide thin film electroluminescent devices

Details Zinc oxide thin film electroluminescent devices Zinc oxide thin film electroluminescent devices

2011-04-12

2011-04-12

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C438S045000

Reexamination Certificate

active

07923288

ABSTRACT:
A thin film electro-luminescent device (TFEL) includes an active layer made of a direct bandgap semiconductor material, e.g. zinc oxide, doped with exciton binding centers, such as aluminum, in small amounts, e.g. 0.001 at % to 30.0 at %. The exciton binding centers prevent free excitons, created by impact ionization, from diffusing toward and recombining at native defect centers. To provide a columnar structure, a polycrystalline seed layer is deposited first to provide a template, followed by the deposition of an overlying layer forming columns in accordance with the template.

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Y. Ono, “Electroluminescent Displays”, World Scientific, 1995.
“Handbook of Electroluminescent Materials”, editor D.R. Vij, pp. 36-37, Institute of Physics Publishing, 2004.

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