Compositions – Inorganic luminescent compositions – Tungsten containing
Reexamination Certificate
2005-08-30
2005-08-30
Kopec, Mark (Department: 1751)
Compositions
Inorganic luminescent compositions
Tungsten containing
C252S500000, C117S002000, C117S003000, C427S126300, C427S226000, C257S102000, C423S622000
Reexamination Certificate
active
06936188
ABSTRACT:
A zinc oxide semiconductor material comprising at least zinc and oxygen as constituent elements, which can be deterred with respect to the deterioration of doping characteristic, luminous characteristic and the like, compared with a conventional c-axial oriented one by orienting the crystal orientation plane to a-axis of the wurtzite structure.
REFERENCES:
patent: 5306522 (1994-04-01), Clough et al.
patent: 5432397 (1995-07-01), Koike et al.
patent: 5980983 (1999-11-01), Gordon
patent: 0 587 407 (1993-09-01), None
patent: 0 638 999 (1994-08-01), None
patent: 1 270 761 (2000-03-01), None
patent: 57-118002 (1982-07-01), None
patent: 06-128088 (1994-05-01), None
patent: 06-216699 (1994-08-01), None
patent: 06-279193 (1994-10-01), None
patent: 10-022519 (1998-01-01), None
Gorla et al, “ Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (0112) sapphire by metalorganic chemical vapor deposition,” J. Applied Physics, 1999, 85(5), pp. 2595-2602.
Emanetouglu et al, “ Epitaxial Growth and Characterization of High Quality ZnO Films for surface Acoustic Wave Applications,” IEEE Ultrasonics Symposium, 1997, 1, pp. 195-199.
Sun et al, “Optical properties of epitaxially grown zinc oxide films on sapphire by pulsed laser deposition,” J. Applied Phys. 1999, 86(1), pp. 408-411.
Xu, “The Challenge of Precursor Compounds in the MOCVD of Oxides,” JOM-e, 1997, 49(10), pp. 1-9.
Liang et al, “Epitaxial Growth of (1120) ZnO on (0112) Al2O3 by Metalorganic Chemical Vapor Deposition,” J. Electronic Matl., 1998, 27(11), L72.
Liu et al, “ Ultraviolet Detectors Based on Epitaxial ZnO Films Grown by MOCVD,” J. Electronic Matl., 2000, 29(1), 69.
Gorla, C.R. et al., “Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (0112) sapphire by metalorganic chemical vapor deposition”, American Institute of PhysicsJournal of Applied Physics,Mar. 1, 1999, vol. 85, No. 5, pp. 2595-2602.
Emanetoglu, et al., “Epitaxial Growth and Characterization of High Quality ZnO Films for Surface Acoustic Wave Applications”, 1997 IEEE Ultrasonics Symposium, pp. 195-199.
Hayes & Soloway P.C.
Kopec Mark
Sumitomo Electric Industries Ltd.
Tohoku Techno Arch Co., Ltd.
Vijayakumar Kallambella
LandOfFree
Zinc oxide semiconductor material does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Zinc oxide semiconductor material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Zinc oxide semiconductor material will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3460586