Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2008-06-24
2010-11-30
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C438S085000, C438S768000, C438S903000, C257SE21211, C257SE21459, C257SE21497
Reexamination Certificate
active
07842539
ABSTRACT:
There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.
REFERENCES:
patent: 2004/0175860 (2004-09-01), Park et al.
patent: 2007/0028959 (2007-02-01), Lee et al.
Kyoung-Kook Kim, et al., “Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant”, Applied Physics Letters, vol. 83, No. 1, Jul. 7, 2003, pp. 63-65.
Hwang Dae Kyu
Kwon Min Ki
Oh Min Suk
Park Seong Ju
Gwangju Institute of Science and Technology
Lee Cheung
Lindsay, Jr. Walter L
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