Zinc oxide piezoelectric crystal film on sapphire plane

Details Zinc oxide piezoelectric crystal film on sapphire plane Zinc oxide piezoelectric crystal film on sapphire plane

1994-08-02

1996-10-29

Robinson, Ellis

Stock material or miscellaneous articles

Composite

Of inorganic material

428700, 428701, 428910, 310313A, 310360, B32B 1800

Patent

active

055695485

ABSTRACT:
When a zinc oxide piezoelectric crystal film is epitaxially grown on an R-plane sapphire substrate by sputtering, a target containing not more than 4.5 percent by weight of Cu with respect to the total content of Zn and Cu is employed so that the zinc oxide piezoelectric film contains Cu. Thus, it is possible to obtain a zinc oxide piezoelectric crystal film having excellent orientation.

REFERENCES:
patent: 3664867 (1969-11-01), Galli et al.
patent: 3766041 (1973-10-01), Wasa
patent: 4142124 (1979-02-01), Ogawa
patent: 4336120 (1982-06-01), Sakakura
patent: 4501987 (1985-02-01), Mitsuyu et al.
patent: 5061870 (1990-07-01), Ieki et al.
patent: 5152864 (1991-07-01), Ieki et al.
patent: 5162690 (1990-04-01), Ieki et al.
CRC Handbook of Chemistry and Physics, 66th Ed., 1985, p. F-164.
European Search Report dated Dec. 8, 1994.

Affiliated with

Also associated with

Rating

Zinc oxide piezoelectric crystal film on sapphire plane does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Zinc oxide piezoelectric crystal film on sapphire plane, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Zinc oxide piezoelectric crystal film on sapphire plane will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1784909