Zinc-oxide-based semiconductor light-emitting device and...

Details Zinc-oxide-based semiconductor light-emitting device and... Zinc-oxide-based semiconductor light-emitting device and...

2011-07-05

2011-07-05

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C257SE31105

Reexamination Certificate

active

07972876

ABSTRACT:
The invention discloses a zinc-oxide-based semiconductor light-emitting device and the fabrication thereof. The method according to the invention, first, is to prepare a substrate. Next, by an atomic-layer-deposition-based process, a ZnO-based multi-layer structure is formed on or over the substrate where the ZnO-based multi-layer structure includes a light-emitting region.

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Liu Kun; Ji Zhenguo, Review of ZnO Thin Film Growth Technology, Vacuum Science and Technology (China), Jul. 2002, 6 pages, vol.-issue No. 22/4.

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