Zinc oxide based compound semiconductor device

Details Zinc oxide based compound semiconductor device Zinc oxide based compound semiconductor device

2011-06-14

2011-06-14

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257SE29094, C117S095000

Reexamination Certificate

active

07960727

ABSTRACT:
There is provided a zinc oxide based compound semiconductor device which, even when a semiconductor device is formed by forming a lamination portion having a hetero junction of ZnO based compound semiconductor layers, does not cause any rise in a drive voltage while ensuring p-type doping, and, at the same time, can realize good crystallinity and excellent device characteristics. ZnO based compound semiconductor layers (2) to (6) are epitaxially grown on the principal plane of a substrate (1) made of MgxZn1-xO (0≦x<1). The principal plane of the substrate is a plane in which an A plane {11-20} or an M plane {10-10} is inclined in a direction of −c axis.

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