Zinc diffusion in the presence of cadmium into indium phosphide

Details Zinc diffusion in the presence of cadmium into indium phosphide Zinc diffusion in the presence of cadmium into indium phosphide

1988-09-09

1989-12-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437151, 437168, 437 3, 437 5, 148DIG40, 252950, H01L 21223

Patent

active

048898309

ABSTRACT:
Zinc is diffused into indium phosphide in the presence of cadmium to prevent degradation of the indium phosphide surface.

REFERENCES:
patent: 3485685 (1969-12-01), Casey et al.
patent: 3573114 (1971-03-01), Marinace
patent: 3802969 (1974-04-01), Marinace
patent: 4477964 (1984-10-01), Chin et al.
Chand et al., "Diffusion of Cd and Zn in InP Between 550.degree. and 650.degree. C.," J. of Elect. Matls. vol. 11, No. 1, 1982, pp. 37-52.
Matsumoto, "Diffusion of Cd and Zn into InP and InGaAsP (Eg=0.95-1.35 eV)", Jap. J. Appl. Phys., vol. 22, No. 11, Nov. 1983, pp. 1699-1704.
Ando et al., "Low Temperature Zn-and Cd-Diffusion Profiles in InP and Formation of Guard Ring in InP Avalanche Photodiodes", IEEE Trans. on Electron Devices, vol. ED-29, No. 9, Sep. 1982, pp. 1408-1413.
Marinace, "EL Junctions by Co-Doping With More Than One Element," IBM Technical Disclosure Bulletin, vol. 11, No. 3, Aug. 1968, p. 324.

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