Coherent light generators – Particular active media – Semiconductor
Patent
1982-08-31
1985-05-14
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
357 17, 372 46, H01S 319
Patent
active
045176744
ABSTRACT:
A zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser device and a method of making the same. A double heterostructure layered structure including a p-type GaAs active layer sandwiched between two n-type AlGaAs confinement layers is formed on a substrate. A p-type zinc diffused stripe region having a U-shaped diffusion front extends longitudinally between two reflective surfaces located on respective ends of the device and extends vertically from the surface of the upper confinement layer down to at least the surface of intersection between the active layer and the lower confinement layer. In a method of forming the device, the various layers are formed by epitaxial growth or by metalorganic chemical vapor deposition. The stripe region is formed by diffusing zinc from a source through a slot in a diffusion mask. The zinc diffused into the device is driven in by heating the device in the absence of the zinc source.
REFERENCES:
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Coleman James J.
Dapkus P. Danial
Hong Chi-Shain
Liu Yet-Zen
Beers Robert F.
Davie James W.
Ellis William T.
Forrest John L.
The United States of America as represented by the Secretary of
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