Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2007-12-12
2011-10-04
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S102000, C257S101000, C257SE33017
Reexamination Certificate
active
08030682
ABSTRACT:
A zinc-blende nitride semiconductor free-standing substrate has a front surface and a back surface opposite the front surface. The distance between the front and back surfaces is not less than 200 μm. The area ratio of the zinc-blende nitride semiconductor to the front surface is not less than 95%.
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Hitachi Cable Ltd.
Jackson, Jr. Jerome
McGinn IP Law Group PLLC
Page Dale E
LandOfFree
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